​TDSW84230 - High Power GaN Switch

The TDSW84230 reflective Single Pole Double Throw (SPDT) high-power RF switch is ideal for replacing Positive-Intrinsic-Negative (PIN) diode-based RF switches commonly used in RF front-ends of many of today’s tactical and military communications radio systems.   The very high breakdown voltage and high saturation current capabilities of this wide-bandgap GaN HEMT switch support a high 20 watts CW power handling, operates from 30 MHz to 5 GHz, has a low 0.2 dB insertion loss, and has 45 dB port isolation offering.  It is available in a 16-pin QFN 3 mm x 3 mm x 0.8 mm plastic surface mount package and qualified to a military temperature range of –55⁰C to 125⁰C. The higher operating power capabilities and high linearity are ideal for meeting the multiple wideband continuous operation demand needs in today’s military and defense software-defined radio architectures. It is ideal for replacing traditional PIN diode switches, has high voltage RF-power handling capabilities while tolerating up to 900mA/mm saturation currents to enable better harmonic and spurious signal requirements support associated with traditional PIN diode switches, and optimizes board area savings compared to PIN diode architectures.